Fabrication and characteristics of Ba(Zr0.1,Ti0.9)O3 thin films on glass substrate
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference9 articles.
1. Electrical properties of sol-gel processed PLZT thin films
2. Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories
3. Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications
4. Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates
5. High dielectric constant (Ba[sub 0.65]Sr[sub 0.35])(Ti[sub 0.41]Zr[sub 0.59])O[sub 3] capacitors for Gbit-scale dynamic random access memory devices
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1. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices;Applied Physics A;2016-03
2. Dependence of Ba(Zr0.15Ti0.85)O3 films growth on substrate temperature and oxygen gas pressure prepared by pulsed laser deposition;Journal of Nanoparticle Research;2015-12
3. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure;Applied Physics A;2015-04-17
4. In-situ post deposition annealing of lead-free ferroelectric thin films in oxygen rich atmosphere;Journal of Materials Science: Materials in Electronics;2015-04-03
5. Memory and Electrical Properties of (100)-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering;Journal of Nanomaterials;2014
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