High dielectric constant (Ba[sub 0.65]Sr[sub 0.35])(Ti[sub 0.41]Zr[sub 0.59])O[sub 3] capacitors for Gbit-scale dynamic random access memory devices-Reference-Cited by-同舟云学术

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High dielectric constant (Ba[sub 0.65]Sr[sub 0.35])(Ti[sub 0.41]Zr[sub 0.59])O[sub 3] capacitors for Gbit-scale dynamic random access memory devices

Published:2000 Issue:1 Volume:18 Page:216
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Jae-Sun,Yoon Soon-Gil

Publisher

American Vacuum Society

Subject

General Engineering

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