Effect of microwave irradiation power on resistive switching performance in solution-processed aluminum oxide resistive memory-Reference-Cited by-同舟云学术

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Effect of microwave irradiation power on resistive switching performance in solution-processed aluminum oxide resistive memory

Published:2018-12 Issue: Volume:123 Page:52-58
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Kang Min-Soo,Cho Won-Ju

Funder

National Research Foundation of Korea

Ministry of Education, Science, and Technology

Small and Medium Business Administration

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference40 articles.

1. Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory;Hsu;Nanotechnology,2014

2. Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability;Fan;Thin Solid Films,2013

3. Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

4. Enhanced write performance of a 64-Mb phase-change random access memory;Oh;IEEE J. Solid State Circ.,2006

5. Magnetic domain-wall racetrack memory;Parkin;Science,2008

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1. Eco‐Friendly Approach to Ultra‐Thin Metal Oxides‐ Solution Sheared Aluminum Oxide for Half‐Volt Operation of Organic Field‐Effect Transistors;Advanced Functional Materials;2024-07-02

2. Influence on Post-treatment Process on Optical and Electrical Properties of IZO Thin Films;Transactions on Electrical and Electronic Materials;2024-03-14

3. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

4. Solution-processed metal oxide dielectric films: Progress and outlook;APL Materials;2021-12-01

5. Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure;Journal of Materials Science: Materials in Electronics;2021-03-26

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