Frequency-dependent admittance analysis on amorphous silicon photodetectors for integrated optical waveguides-Reference-Cited by-同舟云学术

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Frequency-dependent admittance analysis on amorphous silicon photodetectors for integrated optical waveguides

Published:1995-10 Issue:1-3 Volume:29 Page:423-427
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Steiner Klaus,Kühner Gerd,Eberhard Dietmar,Wagner Elmar

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Lateral coupling between a silicon-oxinitride and an amorphous Si photodiode;Kapser;J. Appl. Phys.,1992

2. Fast optical detector deposited on dielectric channel waveguides;Larson;Opt. Eng.,1988

3. Interpretation of capacitance versus voltage measurements in the presence of a high density of deep levels;Shiau;J. Appl. Phys.,1986

4. The influence of interface states upon the admittance of metal-semiconductor diodes;Muret;Semicond. Sci. Technol.,1988

5. Capacitance-voltage measurements on Schottky-diodes with poor ohmic contacts;Steiner;IEEE Trans. Instrum. Meas.,1993

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