The influence of interface states upon the admittance of metal-semiconductor diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/3/i=4/a=008/pdf
Reference41 articles.
1. Study of metal-semiconductor interface states using Schottky capacitance spectroscopy
2. Relation between current‐voltage characteristics and interface states at metal‐semiconductor interfaces
3. The structure and properties of metal-semiconductor interfaces
4. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
5. Improved Schottky capacitance spectroscopy method for the study of interface states in metal‐semiconductor junctions
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