Interpretation of capacitance versus voltage measurements in the presence of a high density of deep levels
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336946
Reference9 articles.
1. Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique
2. A NEW METHOD FOR DETERMINATION OF DEEP‐LEVEL IMPURITY CENTERS IN SEMICONDUCTORS
3. Frequency dependence of of Schottky barriers containing deep impurities
4. A technique for directly plotting the inverse doping profile of semiconductor wafers
5. Capacitance Energy Level Spectroscopy of Deep‐Lying Semiconductor Impurities Using Schottky Barriers
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