Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy-Reference-Cited by-同舟云学术

Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy

Published:1993-09 Issue:1-3 Volume:18 Page:1-89
ISSN:0167-5729
Container-title:Surface Science Reports
language:en
Short-container-title:Surface Science Reports

Author:

Geurts J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials,General Chemistry

Reference308 articles.

1. Semiconductor Devices for Optical Communications,1980

2. Epioptics: linear and non-linear optical spectroscopy of surfaces and interfaces

3. Light Scattering in Solids IV;Abstreiter,1984

4. Semiconductor Interfaces: Formation and Properties;Geurts,1987

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