Channeling analysis of stacking defects in epitaxial Si layers

Author:

Campisano S.U.,Foti G.,Rimini E.,Picraux S.T.

Publisher

Elsevier BV

Subject

General Medicine

Reference10 articles.

1. Ion implantation in semiconductors;Mayer,1970

2. Ion implantation;Foti,1977

3. S. T. Picraux, E. Rimini, G. Foti and S. U. Campisano, to be published.

4. Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated gold

5. Ion channeling studies of the crystalline perfection of epitaxial layers

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1. Swift heavy-ion modification of semiconductor heterostructures;Radiation Effects and Defects in Solids;2007-04

2. Ion beam analysis of defects and strain in swift heavy ion irradiated InGaAs/GaAs heterostructures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-01

3. Axial dechanneling in compound crystals with point defects and defect analysis by RBS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-10

4. Swift-uranium-ion-induced damage in sapphire;Physical Review B;1995-05-01

5. Stacking-fault imaging using transmission ion channeling;Physical Review B;1995-02-01

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