1. Reduction of post-implantation damage in semiconductors by weak magnetic fields;Journal of Physics D: Applied Physics;1993-10-14
2. Comparison of ion‐implantation‐induced damage in narrow‐gap (0.1 eV) Hg1−xCdxTe and Hg1−xZnxTe;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-09
3. A dechanneling investigation of MeV oxygen implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-06
4. Buildup of ion implantation damage in Hg1−x CdxTe for various x values;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-07
5. Radiation damage and annealing in graphite implanted with H+2and Mo+;Journal of Applied Physics;1988-04-15