Reduction of post-implantation damage in semiconductors by weak magnetic fields
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/26/i=10/a=042/pdf
Reference34 articles.
1. Magnetic-Field-Induced Localization of Electrons in Fluctuation Potential Wells of Impurities
2. Role of Free Electrons and Holes in the Exciton Condensation Process in Semiconductors
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1. Low temperature nanoscopic kinetics of hydrogen plasma-enhanced crystallization of a-Si:H films;Journal of Applied Physics;2003-07
2. Novel effects of weak magnetic fields on post-implantation damage in semiconductors and superconducting ceramics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08
3. Effects of weak magnetic fields on post-implantation damage in superconducting oxides;Zeitschrift für Physik B Condensed Matter;1996-03
4. Arrhenius parameters and the compensation effect in crystallization and diffusion in amorphous Si:H(F) in the presence or absence of metal contacts;Journal of Applied Physics;1995-12
5. An X-ray diffraction study of implantation damage in InSb reduced by a magnetic field;Journal of Physics D: Applied Physics;1995-04-14
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