An X-ray diffraction study of implantation damage in InSb reduced by a magnetic field
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/28/i=4A/a=057/pdf
Reference13 articles.
1. Reduction of post-implantation damage in semiconductors by weak magnetic fields
2. Characterization of Boron Implanted Silicon by X-Ray Triple–Crystal Diffractometry
3. X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
4. Evanescent absorption in kinematic surface Bragg diffraction
5. The Intensity Patterns with a Multi-Crystal Diffractometer Observed at a Synchrotron Source
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals for Infrared Detector Applications;Springer Handbook of Crystal Growth;2010
2. Novel effects of weak magnetic fields on post-implantation damage in semiconductors and superconducting ceramics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08
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