Author:
Matsunami Noriaki,Goto Taizan,Itoh Noriaki
Cited by
6 articles.
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1. Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
2. Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
3. Investigation of defects by RBS-channeling methods;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
4. Investigation of point defects by temperature-dependent dechanneling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-04
5. Temperature dependence of axial dechanneling by point defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-03