Ion beam studies part V: The computer simulation of composite ion implantation profiles-Reference-Cited by-同舟云学术

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Ion beam studies part V: The computer simulation of composite ion implantation profiles

Published:1977-07 Issue:2 Volume:144 Page:175-181
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Freeman J.H.,Booker D.V.

Publisher

Elsevier BV

Subject

General Medicine

Reference10 articles.

1. Range parameters of heavy ions at 10 and 35 keV in silicon

2. Summation of Gaussians for ion-implantation profile control

3. Proc. European Conf. on Ion implantation;Beale,1970

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen implantation in semiconductors;Physica B: Condensed Matter;1991-04

2. Hydrogen implantation in semiconductors;Hydrogen in Semiconductors;1991

3. A New Approach to Supported Metal Catalysis: Ion Implantation in Single Crystals Part 1: Catalytic Activity of Pt Implanted (1102) Face of α-Al2O3 Annealed in Argon;New Horizons in Catalysis, Proceedings of the 7th International Congress on Catalysis;1981

4. Impurity Profile of Implanted Ions in Silicon;Impurity Doping Processes in Silicon;1981

5. Catalytic activity of ion implanted single crystal supports: A new tool in catalysis studies;Chemical Physics Letters;1979-01

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