Range parameters of heavy ions at 10 and 35 keV in silicon-Reference-Cited by-同舟云学术

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Range parameters of heavy ions at 10 and 35 keV in silicon

Published:1975-02 Issue:3 Volume:51 Page:165-166
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Feuerstein A.,Kalbitzer S.,Oetzmann H.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference13 articles.

1. Proc. III. Intern. Conf. Ion implantation in semiconductors and other materials;Chu,1973

2. Proc. I. Intern. Conf. Ion implantation;Schiøtt,1971

3. Projected range statistics in semiconductors;Johnson,1970

4. Proc. III. Intern. Conf. Ion implantation in semiconductors and other materials;Mylroie,1973

5. Heavy ion ranges at 100 keV in aluminium

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1. Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates;Japanese Journal of Applied Physics;2010-05-20

2. Ranges of low energy 119Sb and 125I in metals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-05

3. Calculation of projected range distributions of implanted ions in multilayer multi-element substrates;Journal of Physics C: Solid State Physics;1985-02-28

4. Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxide;Journal of Applied Physics;1984-09

5. Quality Factors for Monoenergetic Neutrons;Radiation Research;1984-07

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