Ion beam mixing in amorphous silicon II. Theoretical interpretation

Author:

Matteson S.,Paine B.M.,Nicolet M.-A.

Publisher

Elsevier BV

Subject

General Medicine

Reference33 articles.

Cited by 71 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Computer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition;Journal of Applied Physics;2019-06-14

2. Engineering of Materials by Swift Heavy Ion Beam Mixing;Swift Heavy Ions for Materials Engineering and Nanostructuring;2011

3. Radiation-enhanced diffusion of Sb and B in silicon during implantation below400°C;Physical Review B;2004-03-24

4. On the formation of concentration profiles by low-energy ion bombardment and sputter depth profiling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-09

5. Ion beam induced atomic transport in Pd/Ge system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-11

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