1/f Noise in an AlxGa1−xAs/GaAs heterostructure between 77 and 300 K
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering Spectra
2. Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements
3. Low-frequency excess noise in large GaAs heterostructures-temperature and frequency dependence
4. Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures
5. Evaluation of the trap concentration in highly doped semiconductors from low‐frequency noise spectra
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1. Sources of 1/f noise in QDOGFET single-photon detectors;Physica E: Low-dimensional Systems and Nanostructures;2020-04
2. InSituReduction of Charge Noise inGaAs/AlxGa1−xAsSchottky-Gated Devices;Physical Review Letters;2008-11-26
3. Single-electron switching inAlxGa1−xAs∕GaAsHall devices;Physical Review B;2006-09-15
4. Decomposition of1/fNoise inAlxGa1−xAs/GaAsHall Devices;Physical Review Letters;2006-05-08
5. Modulation of Noise in SubmicronGaAs/AlGaAsHall Devices by Gating;Physical Review Letters;2004-12-07
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