InSituReduction of Charge Noise inGaAs/AlxGa1−xAsSchottky-Gated Devices-Reference-Cited by-同舟云学术

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InSituReduction of Charge Noise inGaAs/AlxGa1−xAsSchottky-Gated Devices

Published:2008-11-26 Issue:22 Volume:101 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Buizert Christo,Koppens Frank H. L.,Pioro-Ladrière Michel,Tranitz Hans-Peter,Vink Ivo T.,Tarucha Seigo,Wegscheider Werner,Vandersypen Lieven M. K.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.101.226603/fulltext

Reference23 articles.

1. Spins in few-electron quantum dots

2. Universal Scaling in Nonequilibrium Transport through a Single Channel Kondo Dot

3. Quantum mechanical complementarity probed in a closed-loop Aharonov–Bohm interferometer

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