Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339938
Reference23 articles.
1. Semiconductor impurity analysis from low-frequency noise spectra
2. Capacitance Transient Spectroscopy
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. DXcenter: Crossover of deep and shallow states in Si-dopedAlxGa1−xAs
5. Theory of theDXcenter inAlxGa1−xAs and GaAs crystals
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