Characterisation of ZnSe and other II–VI semiconductors by radioactive dopants
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Self-compensation in II–VI compounds
2. Growth of p- and n-type ZnSe by molecular beam epitaxy
3. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
4. Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy
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