First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics-Reference-Cited by-同舟云学术

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics

Published:2016-01-08 Issue:2 Volume:119 Page:025703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Varley J. B.¹,Lordi V.¹,He X.²^ORCID,Rockett A.²

Affiliation:

1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA

2. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4939656

Reference69 articles.

1. Solar cell efficiency tables (Version 45)

2. Electrical properties of point defects in CdS and ZnS

3. Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices

4. High-efficiency Cu(In,Ga)Se2 cells and modules

5. Review of Progress Toward 20% Efficiency Flexible CIGS Solar Cells and Manufacturing Issues of Solar Modules

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