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Optical phonons in GaN

Published:1996-04 Issue: Volume:219-220 Page:493-495
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Azuhata T.,Matsunaga T.,Shimada K.,Yoshida K.,Sota T.,Suzuki K.,Nakamura S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. GaN, AlN, and InN: A review

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Polarized Raman spectra in GaN

4. Novel metalorganic chemical vapor deposition system for GaN growth

5. Optical studies of the phonons and electrons in gallium nitride

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2. Morphology-Controlled Reststrahlen Band and Infrared Plasmon Polariton in GaN Nanostructures;Nano Letters;2022-12-02

3. Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques;Journal of Applied Physics;2022-11-21

4. Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy;Journal of Computational Electronics;2022-08-09

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