Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE-Reference-Cited by-同舟云学术

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Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE

Published:1996-09 Issue:1-4 Volume:227 Page:291-294
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Nakashima Hisao,Takeuchi Misaichi,Inoue Koichi,Takeuchi Toshikazu,Inoue Yoshiji,Fischer Peter,Christen Jürgen,Grundmann Marius,Bimberg Dieter

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBE

2. Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces

3. Formation of quantum well wire-like structures by MBE growth of AlGaAs/GaAs superlattices on GaAs (110) surfaces

4. Structural analysis of AlGaAs quantum wires on vicinal (110)GaAs by transmission electron microscopy and energy dispersive X-ray spectroscopy

5. Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces

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1. N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization;Crystals;2023-04-19

2. Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates;Microelectronic Engineering;1999-06

3. Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy;Solid State Phenomena;1998-12

4. Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy;Solid-State Electronics;1998-07

5. Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE;Materials Science and Engineering: B;1998-02

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