Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates-Reference-Cited by-同舟云学术

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Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates

Published:1999-06 Issue:1-4 Volume:47 Page:171-173
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Nishida Takehiro,Maehashi Kenzo,Ota Takeshi,Kobayashi Keisuke,Nakashima Hisao

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces

2. Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE

3. Uniform GaAs quantum wires formed on vicinal GaAs (110) surfaces by two-step MBE growth

4. Growth parameter dependence of step patterns in AlGaAs molecular beam epitaxy on vicinal GaAs(1 1 0) inclined toward (1 1 1)A

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