Growth parameter dependence of step patterns in AlGaAs molecular beam epitaxy on vicinal GaAs(1 1 0) inclined toward (1 1 1)A
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Formation of quantum well wire-like structures by MBE growth of AlGaAs/GaAs superlattices on GaAs (110) surfaces
2. Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy;Applied Surface Science;2000-08
2. Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs(110) Substrates by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1999-08-15
3. Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates;Microelectronic Engineering;1999-06
4. Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy;Solid-State Electronics;1998-07
5. Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE;Materials Science and Engineering: B;1998-02
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