High field transport properties of InAs/AlGaSb quantum wires-Reference-Cited by-同舟云学术

High field transport properties of InAs/AlGaSb quantum wires

Published:1996-09 Issue:1-4 Volume:227 Page:363-366
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Sasa S.,Sugihara T.,Tada K.,Izumiya S.,Yamamoto Y.,Inoue M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Quantized conductance observed at high temperatures in InAs/(AlGa)Sb quantum wires

2. Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations

3. Characterization of very narrow quasi-one-dimensional quantum channels

4. Surface-layer modulation of electron concentrations in InAs–AlSb quantum wells

5. M. Inoue, S. Osako, S. Sasa, K. Tada, T. Sugihara, S. Izumiya, Y. Yamamoto and C. Hamaguchi, Proc. Hot Carriers in Semiconductors, to be published.

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