Quantized conductance observed at high temperatures in InAs/(AlGa)Sb quantum wires
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=5S/a=151/pdf
Reference17 articles.
1. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
2. An InAs channel heterojunction field-effect transistor with high transconductance
3. Quantized conductance in ballistic constrictions at 30 K
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic structure of InAs/GaSb core-shell nanowires;Physical Review B;2012-10-23
2. Electron transport in InAs/AlGaSb ballistic rectifiers;Journal of Physics: Conference Series;2006-05-10
3. Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures;Semiconductor Science and Technology;1998-02-01
4. High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices;physica status solidi (b);1997-11
5. Superconductor-semiconductor junctions with InAs/Al(Ga)Sb quantum wells;Applied Surface Science;1997-06
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