Author:
Sasa S.,Ohya A.,Yodogawa M.,Inoue M.
Cited by
2 articles.
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1. A Single-Electron Transistor Produced by Nanoscale Oxidation of InAs;Japanese Journal of Applied Physics;2001-03-30
2. InAs nanostructure devices fabricated by AFM oxidation process;Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)