Thermal stability of a-Si1−xCx: H films grown by PECVD with different gas sources
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Comparison between methane and acetylene as carbon sources for C-rich a-SiC: H films
2. Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources
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2. Properties of a-Si:N:H films beneficial for silicon solar cells applications;Opto-Electronics Review;2012-01-01
3. Amorphous hydrogenated silicon-nitride films for applications in solar cells;Vacuum;2008-06
4. a-Si:C:H and a-Si:N:H Thin Films Obtained by PECVD for Applications in Silicon Solar Cells;Journal of Electronic Materials;2008-03-25
5. Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems;Applied Physics Letters;2007-01-15
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