Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432948
Reference16 articles.
1. Low dielectric constant materials for microelectronics
2. Proceedings of the Advanced Metallization Conference;Abell T.,2003
3. Dependence of the minimal PVD TA(N) sealing thickness on the porosity of Zirkon™ LK dielectric films
4. Factors affecting an efficient sealing of porous low-kdielectrics by physical vapor deposition Ta(N) thin films
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1. Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's;Applied Physics Letters;2014-04-07
2. Evaluation of domain wall motion during polymorphic phase transition in (K, Na)NbO3-based piezoelectric ceramics by nonlinear response measurements;Journal of Applied Physics;2011-03
3. Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations;Surface Science;2007-08
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