Effects of KIO4 concentration and pH values of the solution relevant for chemical mechanical polishing of ruthenium

Author:

Cheng Jie,Wang Tongqing,Wang Jie,Liu Yuhong,Lu Xinchun

Funder

Science Fund for Creative Research Groups

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Electrodeposition of copper thin film on ruthenium a potential diffusion barrier for Cu interconnects;Chyan;J. Electrochem. Soc.,2003

2. Seed layer enhancement by electrochemical deposition: the copper seed solution for beyond 45nm;Roule;Microelectron. Eng.,2007

3. Oxalic-acid-based slurries with tunable selectivity for copper and tantalum removal in CMP;Janjam;Electrochem. Solid-State Lett.,2008

4. CMP process optimization for improved compatibility with advanced metal liners;Heylen,2010

5. Metallization of sub-30nm interconnects: comparison of different liner/seed combinations;Carbonell,2009

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