Effect of Potassium Iodate-Based Slurry for Polishing of Ruthenium (Ru) as Advanced Interconnects
Author:
Funder
Council of Scientific and Industrial Research, India
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11664-023-10585-6.pdf
Reference74 articles.
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3. A.F. Mayadas, and M. Shatzkes, Electrical-resistivity model for polycrystalline films: The case of arbitrary reflection at external surfaces. Phys. Rev. B 1(4), 1382–1389 (1970). https://doi.org/10.1103/PhysRevB.1.1382.
4. W. Steinhögl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller. J. Appl. Phys. (2005). https://doi.org/10.1063/1.1834982.
5. K.V. Sagi, H.P. Amanapu, S.R. Alety, and S.V. Babu, Potassium permanganate-based slurry to reduce the galvanic corrosion of the Cu/Ru/TiN barrier liner stack during CMP in the BEOL interconnects. ECS J. Solid State Sci. Technol. 5(5), P256–P263 (2016). https://doi.org/10.1149/2.0141605jss.
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