Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution-Reference-Cited by-同舟云学术

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Published:2017-08 Issue: Volume:180 Page:25-29
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wang Fuliang,Ren Xinyu,Zeng Peng,Xiao Hongbin,Wang Yan,Zhu Wenhui

Funder

Natural Science Foundation of China

Department of Science & Technology

CSU

State Key Laboratory of High Performance Complex Manufacturing

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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2. Filling of microvia with an aspect ratio of 5 by copper electrodeposition;Lühn;Electrochim. Acta,2009

3. Inverse analysis of accelerator distribution in copper through silicon via filling;Matsuoka;Electrochim. Acta,2012

4. TSV fillings and electrochemical measurements of the Dialyl-amine additive with cl- and Br;Kondo;J. Electrochem. Soc.,2015

5. Bottom-up filling optimization for efficient TSV metallization;Delbos;Microelectron. Eng.,2010

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