Inverse analysis of accelerator distribution in copper through silicon via filling
Author:
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering
Reference20 articles.
1. High-Aspect-Ratio Copper Via Filling Used for Three-Dimensional Chip Stacking
2. High-Aspect-Ratio Copper-Via-Filling for Three-Dimensional Chip Stacking
3. Analytical Study of the Characteristics of Cu(I) Species for the Via-Filling Electroplating Using a RRDE
4. Three-dimensional silicon integration
5. Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias
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3. Unraveling Adsorption Behaviors of Levelers for Bottom-Up Copper Filling in Through-Silicon-Via;Electronic Materials Letters;2022-08-18
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