High-Aspect-Ratio Copper-Via-Filling for Three-Dimensional Chip Stacking-Reference-Cited by-同舟云学术

High-Aspect-Ratio Copper-Via-Filling for Three-Dimensional Chip Stacking

Published:2005 Issue:11 Volume:152 Page:H173
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kondo Kazuo,Yonezawa Toshihiro,Mikami Daisuke,Okubo Toshikazu,Taguchi Yuichi,Takahashi Kenji,Barkey Dale P.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

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2. M. Tomisaka, H. Yonemura, M. Hoshino, and K. Takahashi , inSolid State Devices and Materials, p. 40, The Japan Society of Applied Physics, Tokyo (2001).

3. K. Takahashi , inThe 2nd Annual Meeting on Electronic SI Technologies, p. 43, Tokyo (2001) (in Japanese).

4. K. Takahashi , in The 1st Annual Meeting on Electronic SI Technologies, p. 23, Tokyo (2000) (in Japanese).

5. T. Harada, K. Asao, K. Sasaki, and Y. Kami , in2001 ICEP Proceedings, p. 39, Tokyo (2001).

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