MIM capacitors using amorphous high-k PrTixOy dielectrics-Reference-Cited by-同舟云学术

MIM capacitors using amorphous high-k PrTixOy dielectrics

Published:2005-06 Issue: Volume:80 Page:313-316
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wenger Ch.,Sorge R.,Schroeder T.,Mane A.U.,Lippert G.,Lupina G.,Dąbrowski J.,Zaumseil P.,Muessig H.-J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. High-density MIM capacitors using Al2O3 and AlTiOx dielectrics

2. High-density MIM capacitors using AlTaOx dielectrics

3. MIM capacitors using atomic-layer-deposited high-/spl kappa/ (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ dielectrics

4. A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics

5. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application

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3. Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness;Applied Physics Letters;2013-06-24

4. Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications;Surface Science;2010-02

5. Characteristics of Cerium Oxide for Metal–Insulator–Metal Capacitors;Electrochemical and Solid-State Letters;2010