Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs-Reference-Cited by-同舟云学术

Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

Published:2007-09 Issue:9-10 Volume:84 Page:2081-2084
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Rafí J.M.,Simoen E.,Mercha A.,Hayama K.,Campabadal F.,Ohyama H.,Claeys C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

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3. Buried-oxide charge trapping induced performance degradation in FD ultra-thin SOI p-MOSFET’s;Wei;IEEE Trans. Electron Dev.,1996

4. Radiation effects in SOI technologies;Schwank;IEEE Trans. Nucl. Sci.,2003

5. Opposite-channel-based injection of hot-carriers in SOI MOSFET’s: physics and applications;Ioannou;IEEE Trans. Electron Dev.,1998

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1. Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs;Electronics;2023-10-13

2. Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress;IEEE Transactions on Nuclear Science;2023-01

3. Total-ionizing-dose induced enhanced hot-carrier injection effect in the 130 nm partially depleted SOI I/O nMOSFETs;Japanese Journal of Applied Physics;2020-02-17

4. Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation;Radiation Effects and Defects in Solids;2019-06-23

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