Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress
Author:
Affiliation:
1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Xinjiang Uygur Autonomous Region
Youth Innovation Promotion Association Chinese Academy of Sciences
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/10021953/09984670.pdf?arnumber=9984670
Reference30 articles.
1. Diagnosing bias runaway in analog/mixed signal circuits
2. Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs
3. Degradation Induced by X-Ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout
4. Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors
5. Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs
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