Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films-Reference-Cited by-同舟云学术

Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films

Published:2014-01 Issue: Volume:113 Page:1-4
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Sun Bing-Cheng,Wang Hua,Xu Ji-Wen,Yang Ling,Zhou Shang-Ju,Zhang Yu-Pei,Li Zhi-Da

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices

2. Improvement of reproducible hysteresis and resistive switching in metal-La0.7Ca0.3MnO3-metal heterostructures by oxygen annealing

3. Resistive switching of aluminum oxide for flexible memory

4. Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

5. Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions

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3. Effects of Mg Doping Concentration on Resistive Switching Behavior and Properties of SrTi1−yMgyO3 Films;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2019-08

4. Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol—Gel Method;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2019-06

5. Resistance-switching properties of Bi-doped $$\hbox {SrTiO}_{3}$$ SrTiO 3 films for non-volatile memory applications with different device structures;Bulletin of Materials Science;2018-12