Effects of Mg Doping Concentration on Resistive Switching Behavior and Properties of SrTi1−yMgyO3 Films
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11595-019-2133-8.pdf
Reference18 articles.
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3. Wei C, Wang H, Xu J, et al. Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si Heterostructure Devices for Nonvolatile Memory Applications[J]. J. Wuhan Univ. Technol. -Mater. Sci. Ed., 2017, 32(1): 29–32
4. Yan ZB, Guo YY, Zhang GQ, et al. High-performance Programmable Memory Devices Based on Co-doped BaTiO3[J]. Adv. Mater., 2011, 23: 1 351–1 355
5. Sun BC, Wang H, Xu JW, et al. Effect of Annealing Temperature on Resistance Switching and Dielectric Characteristics of Bi4Ti3O12 Thin Films[J]. Microelectron. Eng., 2014, 113: 1–4
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