Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching-Reference-Cited by-同舟云学术

Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching

Published:2013-10 Issue: Volume:110 Page:177-182
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Rommel M.,Rumler M.,Haas A.,Bauer A.J.,Frey L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures

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3. Recent Developments in Nanofabrication Using Focused Ion Beams

4. FIB-Nanostructured Surfaces and Investigation of Bio/Nonbio Interactions at the Nanoscale

5. Etch Rate Retardation of Ga[sup +]-Ion Beam-Irradiated Silicon

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