A Hafnium interlayer method to improve the thermal stability of NiSi film-Reference-Cited by-同舟云学术

A Hafnium interlayer method to improve the thermal stability of NiSi film

Published:2008-08 Issue:8 Volume:85 Page:1723-1727
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Yue Xiong-wei,Zhang Li-chun,Gao Yu-zhi,Jin Hai-yan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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2. M. Tsuchiaki, K. Ohuchi and A. Nishiyama, IEEE International Electron Devices Meeting, San. Francisco, CA, December 13–15, 2004, IEDM Technical Digest, 2004, p.1059.

3. T. Ohguro, S. Nakamura, E. Morifuji, M.Ono, T.Yoshitomi, M. Saito, H.Saito, H.s. Momose, H. Iwai, IEEE International Electron Devices Meeting, Washington, DC, December 10–13, 1995 ,IEDM Technical Digest, 1995, p. 453.

4. Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

5. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition

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