Coupling effect between the front and back interfaces in thin SOI MOSFETs-Reference-Cited by-同舟云学术

Coupling effect between the front and back interfaces in thin SOI MOSFETs

Published:2005-06 Issue: Volume:80 Page:245-248
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ohata A.,Cristoloveanu S.,Vandooren A.,Cassé M.,Daugé F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. International Technology Roadmap for Semiconductors: 2004 update Austin, TX: SEMATECH, 2004.

2. Back-gated MOSFETs with controlled silicon thickness for adaptive threshold-voltage control

3. R. Tsuchiya, M. Horiuchi, S. Kimura, M. Yamaoka, T. Kawahara, S. Maegawa, T. Ipposhi, Y. Ohji and H. Matsuoka, IEDM Proc., pp. 631-634, 2004.

4. Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFETs

5. Correct biasing rules for virtual DG mode operation in SOI-MOSFETs

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