Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface-Reference-Cited by-同舟云学术

Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface

Published:2005-06 Issue: Volume:80 Page:202-205
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Iwamoto K.,Ogawa A.,Nabatame T.,Satake H.,Toriumi A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. T. Nabatame, K. Iwamoto, H. Ota, K. Tominaga, H. Hisatamtsu, T. Yasuda, K. Yamamoto, W. Mizubayashi, Y. Morita, N. Yasuda, M. Ohno, T. Horikawa and A. Toriumi, Digest of Technical papers of 2003 Symposium on VLSI Technology, p. 25 (2003).

2. Scaling limits of hafnium–silicate films for gate-dielectric applications

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