Gate-First Processed FUSI/HfO<inf>2</inf>/HfSiO<inf>x</inf>/Si MOSFETs with EOT=0.5 nm - Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing-Reference-Cited by-同舟云学术

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Gate-First Processed FUSI/HfO2/HfSiOx/Si MOSFETs with EOT=0.5 nm - Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Takahashi M.,Ogawa A.,Hirano A.,Kamimuta Y.,Watanabe Y.,Iwamoto K.,Migita S.,Yasuda N.,Ota H.,Nabatame T.,Toriumi A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418990.pdf?arnumber=4418990

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors;Nature;2022-04-06

2. Structural Characteristics of Electrically Scaled ALD HfO2 from Cyclical Deposition and Annealing Scheme;ECS Transactions;2019-12-16

3. Limits of Gate Dielectrics Scaling;Handbook of Thin Film Deposition;2018

4. TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density;Journal of Nanoscience and Nanotechnology;2015-04-01

5. HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks;Thin Solid Films;2014-04

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