Characterisation of sol–gel prepared (HfO2)x(SiO2)1−x (x=0.1, 0.2 and 0.4) by 1H, 13C, 17O and 29Si MAS NMR, FTIR and TGA-Reference-Cited by-同舟云学术

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Characterisation of sol–gel prepared (HfO2)x(SiO2)1−x (x=0.1, 0.2 and 0.4) by 1H, 13C, 17O and 29Si MAS NMR, FTIR and TGA

Published:2008-01 Issue:1-2 Volume:33 Page:16-24
ISSN:0926-2040
Container-title:Solid State Nuclear Magnetic Resonance
language:en
Short-container-title:Solid State Nuclear Magnetic Resonance

Author:

O’Dell Luke A.,Gunawidjaja Philips N.,Holland Mark A.,Mountjoy Gavin,Pickup Dave M.,Newport Robert J.,Smith Mark E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics,General Chemistry,Radiation

Reference35 articles.

1. Alternative dielectrics to silicon dioxide for memory and logic devices

2. Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

3. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

4. Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface

5. Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region

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5. The assembly of silica species with alkylamines: Mechanism of wastewater-free synthesis and the application of gel as a catalyst;Journal of Hazardous Materials;2021-02

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