Author:
Fet A.,Häublein V.,Bauer A.J.,Ryssel H.,Frey L.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
2. H.-C. Wen et al., in: Proceedings of the IEEE Symposium on VLSI Technology, June 12–14, 2007, pp. 160–161.
3. S.C. Song et al., in: Proceedings of the IEDM 2007, December 10–12, 2007, pp. 337–340.
4. Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
5. Fermi level pinning by defects in HfO2-metal gate stacks
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献