Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)-Reference-Cited by-同舟云学术

Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)

Published:2012-04 Issue: Volume:92 Page:62-66
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ito F.,Shobha H.,Tagami M.,Nogami T.,Cohen S.,Ostrovski Y.,Molis S.,Maloney K.,Femiak J.,Protzman J.,Pinto T.,Ryan E.T.,Madan A.,Hu C.-K.,Spooner T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

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4. A.V Glasow, A.H. Fischer, D. Bunel, G. Friese, A. Hausmann, O. Heitzsch, M. Hommel, J. Kriz, S. Penka, P. Raffin, C. Robin, H.-P. Sperlich, F. Ungar, A.E. Zitzelsberger, Proceedings of IEEE Reliablity Physics Symposium, 2003, pp. 146.

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