Low resistivity tungsten for contact metallization-Reference-Cited by-同舟云学术

Low resistivity tungsten for contact metallization

Published:2005-12 Issue:3-4 Volume:82 Page:261-265
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Smith Steven,Aouadi Khaled,Collins Josh,van der Vegt Eric,Basso Marie-Thérese,Juhel Marc,Pokrant Simone

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. P. Smith, J. Fleming, R. Lujan, E. Roherry-Osmun, D. Roberts, in: Proceedings of Advanced Metallization for ULSI Conference, October 1993.

2. T. Hara, T. Ohba, H. Tsuchikawa, in: Proceedings of ULSI-IX Conference, 1994.

3. S.-H. Lee, L. Gonzalez, J. Collins, K. Ashtiani, K. Levy, in: Proceedings of AMC2001, 2001, pp. 649–654.

4. M. Yang et. al., in: Proceedings of AMC2001, 2001, pp. 655–660.

5. S.M. Rossnagel, Semiconductor Fabtech, Edition Number 24, fourth edition, 2004, pp. 13–17.

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks;Journal of Vacuum Science & Technology A;2021-07

2. Critical dimension metrology using Raman spectroscopy;Applied Physics Letters;2020-07-27

3. Co and CoTi x for contact plug and barrier layer in integrated circuits;Microelectronic Engineering;2018-04

4. The anisotropic size effect of the electrical resistivity of metal thin films: Tungsten;Journal of Applied Physics;2017-10-07

5. Surface roughness dependence of the electrical resistivity of W(001) layers;Journal of Applied Physics;2017-09-07