Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technology-Reference-Cited by-同舟云学术

Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technology

Published:2005-12 Issue:3-4 Volume:82 Page:449-453
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Jung Eun Ji,Jung Sug-Woo,Kim Hyun-Su,Yun Jong-Ho,Cheong Seong Hwee,Kim Byung Hee,Choi Gil Heyun,Kim Sung Tae,Chung U-In,Moon Joo Tae,Ryu Byung Il

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Metal Silicides: Active elements of ULSI contacts

2. High-resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition

3. CHEMICAL AND STRUCTURAL CHARACTERIZATION OF Co–Ni SILICIDE THIN FILMS

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