The mechanism of the ion beam inhibited etching formation in Gallium-FIB implanted resist films-Reference-Cited by-同舟云学术

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The mechanism of the ion beam inhibited etching formation in Gallium-FIB implanted resist films

Published:2005-03 Issue: Volume:78-79 Page:39-46
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Arshak Khalil,Mihov Miroslav,Nakahara Shohei,Arshak Arous,McDonagh Declan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Focused ion beam technology and applications

2. R. Gerlach, M. Utlaut, Proc. SPIE Charged Particles Detection, Diagnostics, and Imaging, vol. 4510, 2001, p. 96

3. D. Ferranti, A. Graupera, J. Marshman, D. Stewart, S. Szelag, Proc. SPIE 23rd Annual BACUS Symposium on Photomask Technology, vol. 5256, 2003, p. 546

4. Nanofabrication by FIB

5. Focused ion beam lithography and its application to submicron devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Development in Focused Ion Beam Nanofabrication;Comprehensive Nanoscience and Nanotechnology;2019

2. 3D silicon shapes through bulk nano structuration by focused ion beam implantation and wet etching;Nanotechnology;2017-04-25

3. The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching;Nanotechnology;2009-01-14

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